Peer Review History: Modeling High Blocking Voltage and Doping in 4H Silicon Carbide Bipolar Junction Transistors

Editor(s):

(1) Prof. Giovanni Bucci, University of L’Aquila, Italy.

Approved by:

(1) Dr. Shu-Lung Kuo, Associate Professor, The Open University of Kaohsiung, Kaohsiung City, Taiwan.

Reviewers:

(1) Abderrezak Bekaddour, University of Saad Dahleb Blida 1, Algeria.

(2) Pawan Chandrakant Tapre, SND College of Enginering& Research Center, Savitribai Phue Pune University, India.

Additional Reviewers:

Additional Reviewers: (Comments received after deadline)

Peer Review History:

Peer review report_1 (Abderrezak Bekaddour, Algeria) | File 1 | NA

Peer review report_2 (Pawan Chandrakant Tapre, India) | File 1 | NA

Comment_Academic_Editor | File 1 | NA

Comment_Book_Editor | File 1 | NA